发明名称 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
摘要 Methods for forming materials containing both zirconium and platinum, such as platinum-zirconium films, and articles containing such materials. The resultant films can be used as electrodes in an integrated circuit structure, particularly in a memory device such as a ferroelectric memory device. The platinum-zirconium materials can also be used in catalyst materials.
申请公布号 US6642567(B1) 申请公布日期 2003.11.04
申请号 US20000653513 申请日期 2000.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 MARSH EUGENE P.
分类号 C23C16/30;H01L21/02;H01L21/8246;H01L29/51;(IPC1-7):H01L27/108;H01L29/00 主分类号 C23C16/30
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