发明名称 Method for manufacturing thin film transistor array panel for LCD having a quadruple layer by a second photolithography process
摘要 Simplified method of manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on the substrate by using the first mask. A gate insulating layer, a semiconductor layer, a ohmic contact layer and a metal layer are sequentially deposited to make a quadruple layers, and patterned by a dry etch of using the second mask. At this time, the quadruple layers is patterned to have a matrix of net shape layout and covering the gate wire. An opening exposing the substrate is formed in the display area and a contact hole exposing the gate pad is formed in the peripheral area. Next, ITO is deposited and a photoresist layer coated on the ITO. Then, the ITO layer is patterned by using the third mask and a dry etch, and the data conductor layer and the ohmic contact layer not covered by the ITO layer is dry etched. After depositing a passivation layer, a opening is formed by using the fourth mask and the exposed semiconductor layer through the opening is etched to separate the semiconductor layer under the adjacent data line.
申请公布号 US6642074(B2) 申请公布日期 2003.11.04
申请号 US20020172982 申请日期 2002.06.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG MUN-PYO;PARK WOON-YONG;YOON JONG-SOO
分类号 G09F9/30;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L21/00 主分类号 G09F9/30
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