发明名称 |
Method and circuit for dynamic reading of a memory cell, in particular a multi-level nonvolatile memory cell |
摘要 |
The method for reading a memory cell is based upon integration in time of the current supplied to the memory cell by a capacitive element. The capacitive element is initially charged and then discharged linearly in a preset time, while the memory cell is biased at a constant voltage. In a first operating mode, initially a first capacitor and a second capacitor are respectively charged to a first charge value and to a second charge value. The second capacitor is discharged through the memory cell at a constant current in a preset time; the first charge is shared between the first capacitor and the second capacitor; and then the shared charge is measured.
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申请公布号 |
US6643179(B2) |
申请公布日期 |
2003.11.04 |
申请号 |
US20020047918 |
申请日期 |
2002.01.14 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CAMPARDO GIOVANNI;MICHELONI RINO |
分类号 |
G11C16/06;G11C7/06;G11C11/56;G11C16/02;G11C16/26;(IPC1-7):G11C16/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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