Hybrid silicon on insulator/bulk strained silicon technology

摘要

Silicon on insulator technology and strained silicon technology provide semiconductor devices with high performance capabilities. Shallow trench isolation technology provides smaller devices with increased reliability. Bulk silicon technology provides devices requiring deep ion implant capabilities and/or a high degree of thermal management. A semiconductor device including silicon on insulator regions, strained silicon layer, shallow trench isolation structures, and bulk silicon regions is provided on a single semiconductor substrate.