Assembly and method for improved scanning electron microscope analysis of semiconductor devices

摘要

An assembly and method for improved scanning electron microscope analysis of semiconductor devices include a structure including a first layer and a second layer, the second layer shrinking substantially when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV, and at least part of the surface of the structure coated with a material composed of Iridium, wherein the coating is of sufficient thickness to reduce shrinkage of the second layer to approximately a predetermined amount when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV.