发明名称 |
Phase shift mask blank, phase shift mask, and methods of manufacture |
摘要 |
A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration. |
申请公布号 |
US6641958(B2) |
申请公布日期 |
2003.11.04 |
申请号 |
US20010902645 |
申请日期 |
2001.07.12 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
INAZUKI YUKIO;MARUYAMA TAMOTSU;KOJIMA MIKIO;KANEKO HIDEO;WATANABE MASATAKA;OKAZAKI SATOSHI |
分类号 |
G03F1/08;G03F1/00;G03F1/32;G03F1/68;G03F1/80;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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