| 发明名称 |
Write-once polymer memory with e-beam writing and reading |
| 摘要 |
Storing a data bit includes exposing a volume of a polymer, having a first conductivity, to an electron beam. Exposing damages cross-links in the volume of material. A first conductivity of the polymer is changed to a second conductivity and the data is stored in the bit.
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| 申请公布号 |
US6643161(B2) |
申请公布日期 |
2003.11.04 |
| 申请号 |
US20020282534 |
申请日期 |
2002.10.28 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HANNAH ERIC C.;BROWN MICHAEL A. |
| 分类号 |
G11C13/02;G11C13/04;(IPC1-7):G11C13/00 |
主分类号 |
G11C13/02 |
| 代理机构 |
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代理人 |
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| 地址 |
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