发明名称 |
Semiconductor memory device and manufacturing method thereof |
摘要 |
A high speed/large capacity DRAM (Dynamic Random Access Memory) is generally refreshed each 0.1 sec because it loses information stored therein due to a leakage current. The DRAM also loses information stored therein upon cutoff of a power source. Meanwhile, a nonvolatile ROM (Read-only Memory) cannot be configured as a high speed/large capacity memory.A semiconductor memory device of the present invention realizes nonvolatile characteristic by shielding a drain functioning as a memory node from a leakage current by a tunnel insulator, and also realizes stable and high speed operation by adding a transistor for reading to a memory cell.
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申请公布号 |
US6642574(B2) |
申请公布日期 |
2003.11.04 |
申请号 |
US20000727497 |
申请日期 |
2000.12.04 |
申请人 |
HITACHI, LTD. |
发明人 |
SUNAMI HIDEO;ITOH KIYOO;SHIMADA TOSHIKAZU;NAKAZATO KAZUO;MIZUTA HIROSHI |
分类号 |
G11C16/02;H01L27/108;H01L29/51;H01L29/772;H01L29/786;H01L29/788;(IPC1-7):H01L29/72 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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