Semiconductor device with protective layer

摘要

A semiconductor device includes a substrate and a first insulating film provided above the semiconductor substrate. A first interconnecting layer is provided on the first insulating film. A second insulating film is provided above the first interconnecting layer and the first insulating layer. A first protective film is provided above the second insulating film and composed substantially of metal material. A second protective film is composed substantially of a passivity of the metal material and provided on a surface of the first protective film.