| 摘要 |
To make it possible to locate a physically abnormal portion such as low-resistance short-circuiting between signal wirings or an open fault in a CMOS logic circuit without any design information, in a fault portion locating method for a semiconductor integrated circuit device, a first information table showing a correspondence between a physical abnormality and a defined abnormal IDDQ change mode is prepared in advance, a second information table showing a relationship between a model of the physical abnormality and a change of a light emitting element for the IDDQ abnormal pattern in an operation test pattern by emission analysis is prepared in advance, and in fault analysis, the tables are compared with the abnormal IDDQ obtained from the actual integrated circuit and the change of the light emitting element, respectively, to locate a physically abnormal portion.
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