发明名称 Fine pattern inspection apparatus and method and managing apparatus and method of critical dimension scanning electron microscope device
摘要 A fine pattern inspection apparatus includes: a first calculation unit which receives data of a first secondary electron signal obtained by irradiating a plurality of test patterns formed on a test substrate with an electron beam and receives data of an contour shape of a cross-section of each of the test patterns, the test substrate being the same as a substrate on which a pattern to be inspected is formed, the test patterns being formed with different cross-sectional shapes, and which separates the first secondary electron signal into variables of a first function containing the contour shape of the cross-section as arguments, a second function that is defined by a step function depending on respective materials constituting the test patterns and a third function that represents the size of a distortion of the signal; a storing unit which has a first storing area to store the first through third functions obtained from the first calculation unit; and a second calculation unit which receives data of a second secondary electron signal obtained by irradiating the pattern to be inspected with an electron beam, and executes calculations so as to extract components relating to the cross-sectional shape of the pattern to be inspected from the second secondary electron signal by using the first through third functions stored in the storing unit.
申请公布号 US6642519(B2) 申请公布日期 2003.11.04
申请号 US20020254664 申请日期 2002.09.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IKEDA TAKAHIRO
分类号 G01B15/04;G01N23/22;G01N23/225;H01L21/66;(IPC1-7):G01N23/225;G01R31/305;H01J37/28 主分类号 G01B15/04
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