| 摘要 |
A method of fabricating a silicon wafer, which includes the steps of preparing a silicon wafer by slicing, grinding, and cleaning an ingot, inserting the silicon wafer in a diffusion furnace having an ambience of one of Ar, N2 and inert gas including Ar and N2, pre-heating and maintaining the diffusion furnace at about 500° C., changing the ambience into one of H2, Ar and inert gas including H2 and Ar successively, increasing a temperature of the diffusion furnace by a temperature-increasing speed of 50~70° C./min between 500~800° C., 10~50° C./min between 800~900° C., 0.5~10° C./min between 900~1000° C., and 0.1~0.5° C./min between 1000~1250° C., maintaining the diffusion furnace at 1200~1250° C. for 1~120 min, changing the ambience inside the diffusion furnace into one of Ar, N2 and inert gas ambience including Ar and N2 successively, and decreasing the temperature of the diffusion furnace down to 500 ° C. by a temperature-decreasing speed of 0.1~0.5° C./min between 1000~1250° C., 0.5~10° C./min between 900~1000° C., 10~50° C./min between 800~900° C., and 50~70° C./min between 500~800° C.
|
