Chemically amplified resist composition containing low molecular weight additives

摘要

Disclosed is a chemically amplified positive photoresist composition including a multi-component copolymer having a polystyrene-reduced weight average molecular weight (Mw) of 3,000 to 50,000 and a molecular weight distribution (Mw/Mn) of 1.0 to 3.0, a low molecular weight additive, an acid generator, and a solvent.A resist composition comprising the additive may provide a resist pattern excellent in sensitivity as well as adhesion to substrate and dry etching resistance. Such a resist composition is a promising material greatly suitable for use in the fabrication of semiconductor devices that are expected to have further fineness. Especially, the resist composition is suitable for KrF or ArF excimer laser lithography and thus useful in the fine engineering of less than 0.20 micron patterns.