发明名称 Semiconductor device
摘要 A semiconductor device includes a SAW device chip. The SAW device chip is provided on a passive element chip in which a passive element circuit including a transmission line is formed on a semi-insulating compound substrate having one surface set to have a ground potential electrode. In the semiconductor device, even when the width of the transmission line is increased, a high characteristic impedance can be maintained by increasing the thickness of the substrate. This can reduce the resistance of the transmission line and can facilitate matching with the SAW device.
申请公布号 US6642617(B2) 申请公布日期 2003.11.04
申请号 US20020241522 申请日期 2002.09.12
申请人 FUJITSU QUANTUM DEVICES LIMITED 发明人 KAWAI TAKAHISA
分类号 H01L25/00;H01L23/64;H03H9/05;H03H9/25;(IPC1-7):H01L23/24 主分类号 H01L25/00
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