发明名称 |
Thin and thick gate oxide transistors on a functional block of a CMOS circuit residing within the core of an IC chip |
摘要 |
A functional block for a CMOS circuit within the core of an integrated circuit chip and a method of making the same is disclosed. The functional block uses both thick and thin gate oxide transistors which reduces the leakage current and increases the voltage swing while permitting the device scaling in circuits made in CMOS technology. Within the functional block, the distance between a thick oxide transistor and a thin oxide transistor is chosen based on a transistor stability criterion. The thick and thin oxide transistors can be connected to identical or different voltage sources. Further, a transistor within a functional block can be chosen to be thick or thin oxide transistor based on a leakage current threshold or a voltage swing threshold.
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申请公布号 |
US6642543(B1) |
申请公布日期 |
2003.11.04 |
申请号 |
US20000670484 |
申请日期 |
2000.09.26 |
申请人 |
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
EL GAMAL ABBAS;LIU XINQIAO;LIM SUKHWAN |
分类号 |
H01L27/092;(IPC1-7):H01L29/04 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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