发明名称 Method for fabricating thin film transistor array substrate for liquid crystal display
摘要 The present invention discloses a TFT array substrate (and method for making the same) having the large storage capacitance for use in a liquid crystal display device. In a four-mask process, the conventional storage capacitor of the TFT array substrate includes the capacitor electrodes and the insulation layer and semiconductor layer as a dielectric layer. However, the present invention includes the capacitor electrodes and the insulation layer as a dielectric layer so that the thickness of the dielectric layer becomes thinner. Therefore, much more electric charges can be stored in the storage capacitor. That means the liquid crystal display device can have a high picture quality and a high definition. Moreover, the present invention has a structure that can achieve the high manufacturing yield.
申请公布号 US6642086(B2) 申请公布日期 2003.11.04
申请号 US20020171766 申请日期 2002.06.17
申请人 LG.PHILIPS LCD CO., LTD. 发明人 LIM BYOUNG-HO;KIM YUNG-WAN
分类号 H01L21/00;H01L21/84;H01L27/01;H01L29/04;H01L31/036;H01L31/0376;H01L31/20;(IPC1-7):H01L21/00 主分类号 H01L21/00
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