发明名称 METHOD OF GENERATING TRANSISTOR AC SCATTERING PARAMETERS SIMULTANEOUSLY WITH DC CHARACTERISTICS USING A SINGLE CIRCUIT SIMULATION WITH A SELF-CORRECTION SCHEME FOR THE ARTIFICIAL DC VOLTAGE DROPPED ACROSS THE 50-OHM RESISTOR REPRESENTING TRANSMISSION LINE IMPEDANCE
摘要 A method of generating transistor scattering parameters employs a single circuit simulation with a self-correction scheme for the artificial DC voltage dropped across the 50-Ohm resistor representing transmission line impedance. A sub-circuit without 50-Ohm transmission line resistance is used to compute transistor bias current via a current-controlled voltage source to compensate for the DC voltage dropped across a 50-Ohm resistor contained in the network.
申请公布号 US6642737(B2) 申请公布日期 2003.11.04
申请号 US20010978929 申请日期 2001.10.15
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 EHNIS PAUL;GREEN KEITH R.
分类号 G01R31/26;(IPC1-7):G01R31/26;G06F17/50;G06G7/48 主分类号 G01R31/26
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