发明名称 |
METHOD OF GENERATING TRANSISTOR AC SCATTERING PARAMETERS SIMULTANEOUSLY WITH DC CHARACTERISTICS USING A SINGLE CIRCUIT SIMULATION WITH A SELF-CORRECTION SCHEME FOR THE ARTIFICIAL DC VOLTAGE DROPPED ACROSS THE 50-OHM RESISTOR REPRESENTING TRANSMISSION LINE IMPEDANCE |
摘要 |
A method of generating transistor scattering parameters employs a single circuit simulation with a self-correction scheme for the artificial DC voltage dropped across the 50-Ohm resistor representing transmission line impedance. A sub-circuit without 50-Ohm transmission line resistance is used to compute transistor bias current via a current-controlled voltage source to compensate for the DC voltage dropped across a 50-Ohm resistor contained in the network.
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申请公布号 |
US6642737(B2) |
申请公布日期 |
2003.11.04 |
申请号 |
US20010978929 |
申请日期 |
2001.10.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EHNIS PAUL;GREEN KEITH R. |
分类号 |
G01R31/26;(IPC1-7):G01R31/26;G06F17/50;G06G7/48 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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