| 摘要 |
In the manufacture of integrated semiconductor structures, the problem frequently occurs that the resistance of polysilicon structures employed as interconnects must be selectively lowered. In order to reduce the resistance of a polysilicon structure, the structure is often provided with a silicide layer. However, the manufacturing problem occurs when siliconizing only specific polysilicon structures but not siliconizing others, for example those that are to be employed for resistors. A simple method for producing siliconized polysilicon regions in integrated semiconductor structures of a semiconductor blank having at least one structure formed in a first polysilicon layer and a layer of a first dielectric superimposed on the first polysilicon layer by the following steps: applying a second polysilicon layer onto the layer of the first dielectric; applying a layer of a second dielectric onto the second polysilicon layer; forming at least one predetermined structure in the layer of the second dielectric and of the second polysilicon layer; removing the regions of the layer of the first dielectric that are not covered by the at least one predetermined structure, so that the at least one structure, which is to be fashioned in the first polysilicon layer, is at least partly uncovered; and forming a silicide layer on the at least one uncovered structure.
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