| 摘要 |
A high performance single-wavelength semiconductor laser device having stable and high-speed operation includes an active region, a forward light reflection region located in front of the active region, a backward light reflection region located behind the active region, and a phase control region located in proximity to the active layer, all sandwiched between an upper cladding layer and a lower cladding layer. The forward light reflection region and the backward light reflection region include alternate diffraction grating portions and non-diffracting portions alternately. The laser oscillates at a wavelength which corresponds to the current flowing in the diffraction grating portion. A current blocking layer is located on the non-diffracting portion of at least one of the forward light reflection region and the backward light reflection region for blocking current from flowing into the non-diffracting portion.
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