| 摘要 |
On a laminate containing a p-InGaAsP layer, one of layers including a diffraction grating layer, an SiO2 insulating film pattern that has first rectangular openings, each opening having a long side orthogonal with the direction of the optical wave guide, periodically arranged at intervals in the direction of the optical wave guide is formed. An SiN insulating film pattern having a second opening with a strip shape having a width narrower than the long side of the first opening, extending in the direction of the optical wave guide, is formed on the SiO2 insulating film pattern. The laminate containing the p-InGaAsP layer is dry-etched using the SiO2 insulating film pattern and the SiN insulating film pattern as masks, and methane and a hydrogen plasma as the etching media.
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