| 摘要 |
A control signal MBPRG is inputted to individual block decoders that constitute a block decoder section 37 of an ACT type flash memory. Then, the level of the control signal MBPRG is set to "H" to select all the blocks regardless of the contents of address signals a5 through a13, and one word line WL is selected from all the blocks by the addresses a0 through a4. By thus selecting one word line WL every block that is electrically separated by the select transistor and simultaneously applying a write voltage during the test to the same number of word lines WL as the number of blocks, the possible occurrence of a bad influence exerted on the other memory cells is prevented even when the memory cells in which a write operation during the test has been executed include a memory cell that has a negative threshold voltage.
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