SEMICONDUCTOR MEMORY DEVICE SHARING LASER REPAIR METHOD AND ELECTRICAL REPAIR METHOD

摘要

PURPOSE: A semiconductor memory device sharing a laser repair method and an electrical repair method is provided to increase repair efficiency, by using a redundancy cell in a laser repair and an electrical repair selectively. CONSTITUTION: The semiconductor memory device includes a plurality of normal memory cells and a redundancy cell to replace a defective cell among the normal memory cells, and comprises a repair circuit(300) to control the redundancy cell to be selected in stead of the defective cell. The repair circuit comprises a laser repair part(310) designating a laser repair address using fuses which are blown by a laser and generating a laser repair signal(RR) by comparing the laser repair address with an external address, and also comprises an electrical repair part(350) designating an electrical repair address using fuses which are blown by an excessive current and generating an electrical repair signal(ER) by comparing the electrical repair address with an external address. The redundancy cell is selected to replace the defective cell in response to the enabling of one of the laser repair signal and the electrical repair signal.