| 摘要 |
PURPOSE: An organometallic complex and a method for chemical depositing metal silicate thin film that is usable as a gate insulating film for semiconductor devices using the complex are provided. CONSTITUTION: The deposition method of metal silicate thin film comprises the process of contacting vapor of organometallic complex having structure of the following Formula 1 with a substrate: £formula 1|: (X)a-b-M-(Y-(Si(R)3)m)b, where M is a trivalent or quadrivalent metal; R is alkyl of C1 to C4; X is halogen; Y is 0 or N; a is 3, and b is an integer of 1 to 3 with the proviso that M is a trivalent metal while a is 4, and b is an integer of 1 to 4 with the proviso that M is a quadrivalent metal; and m is 1 with the proviso that Y is 0 while m is 2 with the proviso that Y is N, wherein the organometallic complex of the Formula 1 is Zr-(OSi(CH3)3)4, Zr-(N(Si(CH3)3)2)4, ZrCl2(OSi(CH3)3)2 or ZrCl2(N(Si(CH3)3)2)2, wherein the substrate is heated to a temperature of 200 to 700 deg.C. The organometallic complex is characterized by having structure of the following Formula 2: £Formula 2|: (X)a-b-M-(N(Si(R)3)2)b, where M is a trivalent or quadrivalent metal; R is alkyl of C1 to C4; X is halogen; and a is 3, and b is an integer of 1 to 3 with the proviso that M is a trivalent metal while a is 4, and b is an integer of 1 to 4 with the proviso that M is a quadrivalent metal, wherein the organometallic complex is Zr-(NSi(CH3)3)4 or ZrCl2(N(Si(CH3)3)2)2.
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