METHOD FOR FABRICATING CAPACITOR BY ELECTROCHEMICAL DEPOSITION METHOD

摘要

PURPOSE: A method for fabricating a capacitor by an electrochemical deposition method is provided to improve a characteristic of the capacitor by forming a ruthenium thin film of a better quality than that of a ruthenium thin film fabricated by a metal organic deposition method. CONSTITUTION: An insulation layer on a substrate(20) is selectively etched to form a contact hole of the capacitor. A contact medium including a nitride is formed inside the contact hole to leave the upper step of the contact hole. A metal seed layer(25) for an electrochemical deposition method is formed to cover the insulation layer while filling the remaining upper step of the contact hole. A capacitor sacrificial layer in which a region overlapping the contact hole is opened is formed on the metal seed layer. A ruthenium layer is formed as a capacitor electrode in the open region of the sacrificial layer by an electrochemical deposition method.