发明名称 UNIT PIXEL OF CMOS IMAGE SENSOR FOR IMPROVING DARK CURRENT PROPERTY AND FILL FACTOR
摘要 PURPOSE: A unit pixel of a CMOS image sensor is provided to improve dark current property by directly connecting a reset transistor to a photodiode and to improve fill factor by using an improved drive transistor. CONSTITUTION: A photodiode(201) senses a light and generates optical carriers. A reset transistor(204) is directly connected to the photodiode(201) so as to improve dark current. A floating diffusion region(203) stores the carrier generated in the photodiode. A transfer transistor(202) is connected between the photodiode and the floating diffusion region. A drive transistor(206) detects an electrical signal from the floating diffusion region. A select transistor(208) is connected to the drive transistor. At this time, a gate and a drain of the drive transistor(206) are connected each other by using butting contact, thereby improving fill factor.
申请公布号 KR20030084491(A) 申请公布日期 2003.11.01
申请号 KR20020023237 申请日期 2002.04.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, WON HO
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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