| 摘要 |
PURPOSE: A semiconductor device is provided to be capable of preventing electric chemical destruction of a metallic fuse. CONSTITUTION: The first interlayer dielectric(11) is formed on a semiconductor substrate(10). The second, third and fourth interlayer dielectric(12,17,18) are stacked on the first interlayer dielectric. A plurality of guard rings(14,15,16) are formed at peripheral region of a fuse box for preventing moisture from attacking into a peripheral circuit via the fuse box. Also, a metallic fuse(19) is formed in the second interlayer dielectric(12). A same voltage is applied to the guard rings(14,15,16) and the metallic fuse(19).
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