发明名称 SEMICONDUCTOR MEMORY MODULE INCLUDING DEVICE FOR COMPENSATING LOAD EFFECT OF TIE BAR
摘要 PURPOSE: A semiconductor memory module including a device for compensating a load effect of a tie bar is provided to improve a lowering phenomenon of impedance and a lowering phenomenon of high frequency characteristic by installing a compensating line between a tie bar and a module channel line. CONSTITUTION: A semiconductor memory module including a device for compensating a load effect of a tie bar includes a tie bar(31), a module channel line(30), and a compensating line(32). The tie bar(31) is used for performing an electric plating process on a surface of a module of an internal layer of a printed circuit board. The compensating line(32) is connected between the tie bar(31) and the module channel line(30). The impedance of the compensating line(32) is larger than the impedance of the module channel line(30). The module channel line(30) has the first line width. The compensating line(32) has the second line width.
申请公布号 KR20030084511(A) 申请公布日期 2003.11.01
申请号 KR20020023274 申请日期 2002.04.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE JUN;PARK, MYEON JU;SO, BYEONG SE
分类号 H05K3/00;(IPC1-7):H05K3/00 主分类号 H05K3/00
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