| 摘要 |
PURPOSE: A unit pixel of a CMOS image sensor with improved characteristic is provided to replace a reset transistor with a reset input including a resistor to simplify the structure of the unit pixel and reduce leakage current. CONSTITUTION: A unit pixel of a CMOS image sensor includes a photo-diode for detecting external lights to generate optical charges, a floating diffusion region for receiving and storing the charges, and a transfer transistor that is connected between the photo-diode and the floating diffusion region to transfer the charges into the floating diffusion region. The unit pixel further includes a reset input and a drive transistor. The reset input is connected to one side of the transfer transistor and the floating diffusion region to reset the photo-diode according to an input signal and employs a resistor. The gate of the drive transistor is connected to the floating diffusion region to detect an electric signal from the floating diffusion region. |
