发明名称 METHOD FOR MANUFACTURING HIGH POWER LASER DIODE
摘要 PURPOSE: A method for manufacturing a high power laser diode is provided to remove the patterning portion of the dielectric layer used as a current block layer(CBL) to contact with the metal without departing from the range of the patterning portion. CONSTITUTION: A method for manufacturing a high power laser diode includes the steps of: coating a negative photoresist layer after forming a SiNx stack layer(314) and performing a soft baking; coating a positive photoresist thereon; forming an open pattern in a wide area having a ridge; removing the photoresist layer by using a plasma etching; and etching the SiNx stack layer(314) after performing the plasma etching and removing the photoresist layer served as a mask.
申请公布号 KR20030084514(A) 申请公布日期 2003.11.01
申请号 KR20020023279 申请日期 2002.04.27
申请人 LG INNOTEC CO., LTD. 发明人 KIM, SANG MUK;LEE, GWANG CHEOL
分类号 H01S5/22;(IPC1-7):H01S5/22 主分类号 H01S5/22
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