发明名称 |
METHOD FOR MANUFACTURING HIGH POWER LASER DIODE |
摘要 |
PURPOSE: A method for manufacturing a high power laser diode is provided to remove the patterning portion of the dielectric layer used as a current block layer(CBL) to contact with the metal without departing from the range of the patterning portion. CONSTITUTION: A method for manufacturing a high power laser diode includes the steps of: coating a negative photoresist layer after forming a SiNx stack layer(314) and performing a soft baking; coating a positive photoresist thereon; forming an open pattern in a wide area having a ridge; removing the photoresist layer by using a plasma etching; and etching the SiNx stack layer(314) after performing the plasma etching and removing the photoresist layer served as a mask.
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申请公布号 |
KR20030084514(A) |
申请公布日期 |
2003.11.01 |
申请号 |
KR20020023279 |
申请日期 |
2002.04.27 |
申请人 |
LG INNOTEC CO., LTD. |
发明人 |
KIM, SANG MUK;LEE, GWANG CHEOL |
分类号 |
H01S5/22;(IPC1-7):H01S5/22 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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