SOI WAFER AND MANUFACTURING METHOD OF SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide an SOI wafer preventing an SOI layer from being charged by electrostatics in the manufacturing process of the SOI wafer or a device, and to provide a manufacturing method of the SOI wafer. SOLUTION: The SOI wafer is formed of at least the SOI layer, an insulation layer and a support substrate, is provided with a charge preventing means for preventing the SOI layer from being charged at one part of the SOI layer. A connecting part for conducting the outer peripheral end of the SOI layer and the support substrate is formed after a process for particularly forming an SOI structure constituted of the SOI layer, the insulation layer and the support substrate. COPYRIGHT: (C)2004,JPO