| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting element having high emission intensity. <P>SOLUTION: The light-emitting element has a clad layer also serving as a contact layer 4 composed of a first conductivity-type III-V nitride based semiconductor, an active layer formed on the contact layer 4 and composed of a III-V nitride based semiconductor containing In, an undoped cap layer 6 formed on the active layer 5 and composed of a III-V nitride based semiconductor, and a clad layer 7 formed on the cap layer 6 and composed of a second conductivity-type III-V nitride based semiconductor. <P>COPYRIGHT: (C)2004,JPO |
