发明名称 FILM DEPOSITION SYSTEM AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a system and a method for depositing a film, by which the brightness property of a dielectric film deposited on the whole surface of a substrate is made uniform when a MgO film is deposited by an ion plating method using a plurality of sheet-like plasma flows while moving the substrate. SOLUTION: In the film deposition system, the dielectric film is deposited on the surface for film deposition of the substrate 11 while moving a film material 22 in an environment where a plasma is formed. The film deposition system has a carrying mechanism for carrying the substrate in a prescribed direction, a plasma flow generating unit 25 for generating a plurality of plasma flows 24 along the carrying direction of the substrate by using a magnetic field, a plurality of film material sources 23 which are provided so as to correspond to each of the plurality of plasma flows and onto which the plasma flows are irradiated, an opening part 17 for defining an area for supplying the film material, and a plate-like magnetic body 16 which is arranged at the back face side of the substrate so as to correspond to the opening part 17. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003306768(A) 申请公布日期 2003.10.31
申请号 JP20020113664 申请日期 2002.04.16
申请人 ANELVA CORP 发明人 TAKAGI SHINJI;MORIWAKI TAKAYUKI;HATAYAMA SHOJI;NAKAKAWARA HITOSHI
分类号 C23C14/50;H01J37/32;(IPC1-7):C23C14/50 主分类号 C23C14/50
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