| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low cost and high capacity memory structure and to provide a means for controlling the memory structure. <P>SOLUTION: The memory structure (20) comprises a memory storage element (23) electrically coupled to a control element (25). The control element (25) is constituted of a tunnel-junction device. The memory storage element (23) also can be constituted of a tunnel-junction device. A method for fusion a tunnel- junction device of the memory storage element without fusing a tunnel-junction device of an associated control element is disclosed. The memory structure (20) is constituted of the memory storage element (23), the control element (25) comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element (930). The reference element (930) is configured as a reference for protecting the control element (25) when the state of the memory storage element (23) is selectively controlled. <P>COPYRIGHT: (C)2004,JPO |
