| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten an access time of a semiconductor memory. <P>SOLUTION: Each of memory cells (1) is constituted of an access transistor (6) for sensing, an access transistor (7) for restoring, and a memory capacitor (8). The sense access transistor is coupled to a sense word line (SWL) and the memory capacitor is coupled to a sense bit line (SBL). The restore-access transistor couples the memory capacitor to a restore-bit line (RBL) conforming to a signal on a restore-word line (RWL). Electric charge of the memory capacitor are transferred to a sense amplifier (2) through the sense bit line, and sense data of the sense amplifier is transferred to the original memory capacitor through a restore-amplifier (3) and the restore-access transistor. An output signal line of the sense amplifier is separated electrically from the sense bit line and the restore-bit line. <P>COPYRIGHT: (C)2004,JPO |
