发明名称 PROCEDE DE FABRICATION D'UN SUBSTRAT NOTAMMENT POUR L'OPTIQUE, L'ELECTRONIQUE OU L'OPTOELECTRONIQUE ET SUBSTRAT OBTENU PAR CE PROCEDE
摘要 <p>Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.</p>
申请公布号 FR2817395(B1) 申请公布日期 2003.10.31
申请号 FR20000015280 申请日期 2000.11.27
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 GHYSELEN BRUNO;LETERTRE FABRICE
分类号 H01L27/12;H01L21/02;H01L21/762;H01L29/165;H01L29/20;H01L29/24;H01L29/267;(IPC1-7):H01L21/328;H01L21/20 主分类号 H01L27/12
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