发明名称 MELTING PROCESSING AT LOW TEMPERATURE OF ORGANIC/ INORGANIC HYBRID FILM
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive organic/inorganic hybrid material for melting processing which can be used for various use, including a light emission layer and a charge transfer layer of a flat panel display, a non-linear light/ photoconductive device, a chemical sensor, and an organic/inorganic light emitting diode, and a channel layer of an organic/inorganic thin film transistor and an organic/inorganic field-effect transistor. SOLUTION: The method, which is for manufacturing the organic/inorganic hybrid material for melting processing and which contains a step for maintaining the solid organic/inorganic hybrid material, at a temperature higher than the melting point of the organic/inorganic hybrid material but lower than its decomposition temperature, for a period of time sufficient to form a uniformly melt article and the step after that which cools down the uniformly melt article at ambient temperature, with sufficient conditions to generate the organic/ inorganic hybrid material for melting processing, is provided. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003309308(A) 申请公布日期 2003.10.31
申请号 JP20030062285 申请日期 2003.03.07
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 DEHAVEN PATRICK W;MEDEIROS DAVID R;MITZI DAVID B
分类号 H01L51/05;C23C2/00;H01L21/00;H01L21/336;H01L29/78;H01L29/786;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L51/00 主分类号 H01L51/05
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