发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress the peeling of a protective insulating film from an organic siloxane film without raising the specific inductive capacity of the siloxane film. SOLUTION: The peeling of the protective insulating film from the organic siloxane film is suppressed by forming a reformed layer by plasma-treating the surface of the siloxane film with a fluorinecontaining gas and, thereafter, forming the protective insulating film on the reformed layer. Consequently, the peeling of the protective insulating film from the organic siloxane film can be prevented, because the adhesive property between the siloxane film and insulating film can be improved without raising the specific inductive capacity of the siloxane film. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003309173(A) 申请公布日期 2003.10.31
申请号 JP20020115605 申请日期 2002.04.18
申请人 HITACHI LTD 发明人 RYUZAKI DAISUKE;FURUSAWA KENJI
分类号 H01L23/522;H01L21/312;H01L21/316;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L29/40;H01L31/0328;(IPC1-7):H01L21/768 主分类号 H01L23/522
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