| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT comprising required characteristics. SOLUTION: Related to a semiconductor device having a crystalline silicon film provided above a substrate, the crystalline silicon film is formed from a columnar crystal in which (110) is arrayed in a direction vertical to the substrate, and the thickness of the crystalline silicon film is 300-1500Å. By selecting crystal growth direction of the crystalline silicon film in this way, a constitution wherein a carrier moving between a source and a drain cuts across a grain boundary is made. Consequently, the TFT of small off current is acquired. COPYRIGHT: (C)2004,JPO
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