发明名称 METHOD FOR MANUFACTURING DOMAIN INVERSION PART
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for forming a domain inversion part extending up to a deep position from the surface of a substrate when manufacturing the domain inversion part by a voltage application method by using a comb- shaped electrode having a plurality of electrode pieces arranged on the surface of a ferroelectric monocrystal substrate made to be a single domain. <P>SOLUTION: This is a method for manufacturing a domain inversion part by a voltage application method using a comb-shaped electrode 30 having a plurality of electrode pieces 3A arranged on a surface of a single domain ferroelectric monocrystal substrate, and the piece of electrode 3A has a 1st electrode part 44, and a 2nd electrode part 42 wider than the 1st electrode part 44, and at least one 1st electrode part 44 is arranged at the tip side 3A of at least one 2nd electrode part. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003307757(A) 申请公布日期 2003.10.31
申请号 JP20020113834 申请日期 2002.04.16
申请人 NGK INSULATORS LTD 发明人 NEHAGI TAKATOMO;IWAI MAKOTO;YAMAGUCHI SHOICHIRO
分类号 G02F1/37;(IPC1-7):G02F1/37 主分类号 G02F1/37
代理机构 代理人
主权项
地址