| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor having a structure for preventing an increase in a collector resistance caused by being thinned by etching a sub- collector layer. SOLUTION: HBT 1 has a substrate 2 composed of a semi-insulating InP, a sub-collector layer 3 formed on the substrate 2, an insertion layer 4 formed on the sub-collector layer 3, a main mesa 10 formed on the insertion layer 4, and an emitter contact mesa 8 formed on the main mesa 10. The main mesa 10 includes a collector layer 5, a base layer 6, and an emitter layer 7. The sub-collector layer 3, the collector layer 5 and the emitter contact mesa 8 are composed of In<SB>x</SB>Ga<SB>1-x</SB>As. The insertion layer 4 and the emitter layer 7 are formed of InP. COPYRIGHT: (C)2004,JPO
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