| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for plasma discharge treatment capable of efficiently conducting a series of surface treatments including a cleaning treatment, a film deposition treatment, and an etching treatment, and depositing a uniform thin film free from irregularities in film thickness. <P>SOLUTION: The apparatus 1 for plasma discharge treatment has a gas- supplying means and a means 4 for plasma discharge treatment, which treats the surface of a base material L by impressing a voltage under atmospheric pressure or a pressure close to the atmospheric pressure so as to excite an inert gas supplied by the gas-supplying means and to generate the excited inert gas, thereby making a reactive gas into plasma and bringing the plasmatized reactive gas or the excited inert gas into contact with the base material L. The means 4 for plasma discharge treatment is capable of selectively conducting the cleaning treatment for cleaning by bringing the excited inert gas into contact with the base material L, the film deposition treatment for depositing the film by bringing the excited inert gas and the plasmatized reactive gas into contact with the base material L, and the etching treatment for etching by bringing the excited inert gas into contact with the base material L. <P>COPYRIGHT: (C)2004,JPO |
