发明名称 THIN FILM SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, THEIR MANUFACTURING METHOD, AND RETICLE
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film semiconductor device without producing an undercut on a lower part of a thin film even when a pattern has an intersection part in patterning of the thin film, and to provide its manufacturing method. <P>SOLUTION: A semiconductor film (1) has the pattern including a bent shape or a projection shape. The bent or projected intersection is regulated, and a different line segment (1X) exists between one line segment (1AR) and the other line segment (1BU) in one adjacent line segment (1AR) and the other line segment (1BU). Smooth intersections (1K) are formed wherein an angle making another line segment and one line segment, and an angle making another line segment and the other line segment, are larger than 90&deg; and smaller than 180&deg;. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003309122(A) 申请公布日期 2003.10.31
申请号 JP20020343966 申请日期 2002.11.27
申请人 SEIKO EPSON CORP 发明人 AMANO RYUSUKE;KITAWADA KIYOBUMI
分类号 G02F1/1368;G02F1/1335;G03F1/00;G03F1/68;G03F7/20;G09F9/30;H01L21/027;H01L21/3205;H01L21/336;H01L21/768;H01L29/786 主分类号 G02F1/1368
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