| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having excellent high-speed responsiveness. <P>SOLUTION: First and second DBRs form a resonator at a predetermined interval. A single-quantum well active layer 5 is disposed at the position of the antinode of a standing wave inside the resonator. The layer 5 includes a Ga<SB>0.5</SB>In<SB>0.5</SB>P well layer 41, and a pair of (Al<SB>0.5</SB>Ga<SB>0.5</SB>)<SB>0.5</SB>In<SB>0.5</SB>P barrier layers 42, 42 sandwiching the layer 41. The impurity concentration of the layer 41 is set to 2×10<SP>16</SP>cm<SP>-3</SP>, and the impurity concentration of each of the layers 42, 42 is set to 2×10<SP>18</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2004,JPO |
