发明名称 MULTI-LAYER FINE WIRING STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a new multi-layer fine wiring structure concerning a manufacturing method of multi-layer wiring in a digital integrated circuit chip for high speed information processing and in a mounting system such as a package, a module and a board for mounting the chip, and to provide its manufacturing method. SOLUTION: An impedance is controlled constant and a line suitable for digital high speed signal transmission can be obtained in a wide frequency band for obtaining the multi-layer fine wiring structure having a transmission line structure such as a strip line, a micro strip line and a coaxial line by using metals such as copper, silver, gold, aluminum, palladium and niobium as a wiring layer by using high resolution photosensitive polyimide as an insulating layer. Via hole processing to the insulating layer is attained by only a lithography process by using the photosensitive polyimide having high resolution characteristics as the insulating layer. A high density structure can be obtained as compared with a conventional multi-layer wiring technology by forming a metal wiring layer with a pattern by a lift-off method, and the process can be simplified remarkably. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003309121(A) 申请公布日期 2003.10.31
申请号 JP20020112890 申请日期 2002.04.16
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;PI R & D CO LTD 发明人 AOYANAGI MASAHIRO;NAKAGAWA HIROSHI;TOKORO KAZUHIKO;KIKUCHI KATSUYA;ITAYA HIROSHI;SEGAWA SHIGEMASA
分类号 H01L21/3205;H01L21/768;H01L23/12;H01L23/52;H01L23/522;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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