| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer of superior surfaces. SOLUTION: By supplying raw material gas to a principal surface of a silicon single crystal substrate W in a reaction vessel set in a pressure reducing environment, a silicon epitaxial layer is vapor-phase grown. In a hydrogen chloride treatment process, hydrogen chloride gas from 500 to lower than 800°C is introduced into the reaction vessel. In a hydrogen heat treatment process, the silicon substrate W in the reaction vessel is heat-treated in a hydrogen atmosphere at 800-1000°C. In a vapor-phase growth process, by supplying monosilane gas at a level not lower than 550°C to less than 750°C to the principal surface of the silicon substrate W in the reaction vessel, the silicon epitaxial layer is formed in vapor phase growth. COPYRIGHT: (C)2004,JPO
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