| 摘要 |
<p>A method for forming non-polar (A1,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (1120) a-plane GaN layers are grown on an r-plane (1102) sapphire substrate using MOCVD. These non-polar (1120) a-plane GaN layers comprise templates for producing non-polar (A1,B,In,Ga)N quantum well and heterostructure materials and devices.</p> |
