| 发明名称 |
METHOD FOR FORMING SILICON CONTAINING LAYERS ON A SUBSTRATE |
| 摘要 |
A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.
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| 申请公布号 |
US2003203614(A1) |
申请公布日期 |
2003.10.30 |
| 申请号 |
US20020136455 |
申请日期 |
2002.04.29 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RAJAGOPALAN NAGARAJAN;FENG JOE;NGAI CHRISTOPHER S.;SHEK MEIYEE;PARIKH SUKETU A.;THANH LINH H. |
| 分类号 |
H01L21/311;H01L21/314;H01L21/318;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/311 |
| 代理机构 |
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