ROM data storage module for computer has semiconductor memory layer standing on arrays of vertical conductors on substrate with sources and drains bridged by gates between columns

摘要

The memory layer (4) has at least one area (41) which is rendered conducting by n- or p-doping. The layer is supported on several conducting columns (5), each with three shelves (1-3) to contact metalized conductors. The columns stand on a substrate (Sub) between sources (S) and drains (D) of adjacent memory cells (MC). The gates (G) of each memory cell form bridges standing up above the substrate.