发明名称 |
Compensating scatter/reflection effects in particle lithography involves writing frame in particle-sensitive material around pattern area so background dose variations are below 30 per cent of maximum |
摘要 |
The method involves providing at least one coating of particle-sensitive material, writing defined patterns (20) into a limited area (21) of the particle-sensitive material using at least one particle beam and writing a frame (22) in the particle-sensitive material around the limited area so that variations in background dose within the area are smaller than 30 per cent of the maximum background dose within the area.
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申请公布号 |
DE10215193(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
DE2002115193 |
申请日期 |
2002.04.05 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ERBER, FRANK;SCHOENHER, BERND;LUTZ, TAREK;EBI, CHRISTIAN;RUHL, GUENTHER;FRANKE, TORSTEN;GANS, FRITZ |
分类号 |
G03F1/00;G03F1/14;G03F7/20;G03F9/00;H01J37/30;H01J37/302;H01J37/317;(IPC1-7):H01J37/30 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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