发明名称 Compensating scatter/reflection effects in particle lithography involves writing frame in particle-sensitive material around pattern area so background dose variations are below 30 per cent of maximum
摘要 The method involves providing at least one coating of particle-sensitive material, writing defined patterns (20) into a limited area (21) of the particle-sensitive material using at least one particle beam and writing a frame (22) in the particle-sensitive material around the limited area so that variations in background dose within the area are smaller than 30 per cent of the maximum background dose within the area.
申请公布号 DE10215193(A1) 申请公布日期 2003.10.30
申请号 DE2002115193 申请日期 2002.04.05
申请人 INFINEON TECHNOLOGIES AG 发明人 ERBER, FRANK;SCHOENHER, BERND;LUTZ, TAREK;EBI, CHRISTIAN;RUHL, GUENTHER;FRANKE, TORSTEN;GANS, FRITZ
分类号 G03F1/00;G03F1/14;G03F7/20;G03F9/00;H01J37/30;H01J37/302;H01J37/317;(IPC1-7):H01J37/30 主分类号 G03F1/00
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