发明名称 |
Method for forming a carbon doped oxide low-k insulating layer |
摘要 |
A method for forming a dielectric insulating layer with a reduced dielectric constant and increased hardness for semiconductor device manufacturing including providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing according to a CVD process a carbon doped oxide layer the CVD process including an organo-silane precursor having Si-O groups and Si-Ry groups, where R is an alkyl or cyclo-alkyl group and y the number of R groups bonded to Si; and, exposing the carbon doped oxide layer to a hydrogen plasma treatment for a period of time thereby reducing the carbon doped oxide layer thickness including reducing the carbon doped oxide layer dielectric constant and increasing the carbon doped oxide layer hardness.
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申请公布号 |
US2003203652(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020131713 |
申请日期 |
2002.04.25 |
申请人 |
BAO TIEN-I;KO CHUNG-CHI;LI LIH-PING;JANG SYUN-MING |
发明人 |
BAO TIEN-I;KO CHUNG-CHI;LI LIH-PING;JANG SYUN-MING |
分类号 |
C23C16/40;C23C16/56;H01L21/316;H01L21/768;(IPC1-7):H01L21/31;H01L21/469;H01L21/476 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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